Improved phase-change characteristics of Zn-doped amorphous Sb7Te3 films for high- speed and low-power phase change memory
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A zero density change phase change memory material: GeTe-O structural characteristics upon crystallisation
Oxygen-doped germanium telluride phase change materials are proposed for high temperature applications. Up to 8 at.% oxygen is readily incorporated into GeTe, causing an increased crystallisation temperature and activation energy. The rhombohedral structure of the GeTe crystal is preserved in the oxygen doped films. For higher oxygen concentrations the material is found to phase separate into G...
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